CuInS2 thin films obtained through an innovative CSVT deposition method from solvothermal-generated precursors
| Autor: | K. Djessas, J. Ben Belgacem, K. Medjnoun, Z. Ben Ayadi, M. Nouiri |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Scanning electron microscope Mechanical Engineering Energy-dispersive X-ray spectroscopy Nanoparticle 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences symbols.namesake Electron diffraction Chemical engineering Mechanics of Materials symbols Deposition (phase transition) General Materials Science Crystallite Thin film 0210 nano-technology Raman spectroscopy |
| Zdroj: | Materials Science in Semiconductor Processing. 83:224-230 |
| ISSN: | 1369-8001 |
| Popis: | Copper indium disulfide (CuInS2) nanoparticles with sizes 20 ± 5 nm were synthesized by solvothermal techniques. Subsequently these were deposited for the first time on glass via a close-spaced vapor transport technique (CSVT) using iodine as transport agent. Optimization of the temperature and time was carried out during the deposition process. The surface properties were investigated in details by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–vis–NIR and Raman spectrophotometer, energy dispersive spectroscopy and electron diffraction (EDS). The CuInS2 films presented polycrystalline morphology, preferentially oriented along the (112) crystallographic plane and have band-gap values between 1.44 and 1.60 eV. The development of these films is relevant for photovoltaic applications. |
| Databáze: | OpenAIRE |
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