Determination of minority carrier lifetimes in CuInSe2 thin films

Autor:	S. Zott, M. Ruckh, K. Leo, H.‐W. Schock, K. Puech
Rok vydání:	1996
Předmět:	Materials science Photoluminescence Physics and Astronomy (miscellaneous) business.industry Exciton Carrier lifetime Nanosecond Molecular physics Condensed Matter::Materials Science Picosecond Radiative transfer Optoelectronics Thin film Luminescence business
Zdroj:	Applied Physics Letters. 69:3375-3377
ISSN:	1077-3118 0003-6951
Popis:	We present detailed measurements of carrier lifetimes in CuInSe2 thin films. Time‐resolved photoluminescence measurements are performed on polycrystalline samples grown with a lateral gradient in the Cu/In ratio, thus enabling continuous evaluation of lifetime dependence on film composition. Luminescence at two distinct spectral positions is observed: A high energy emission, attributed to free carrier or free exciton recombination (depending on composition), that decays extremely fast with a lifetime of tens of picoseconds to a few ns; a lower energy emission from defect related recombination that decays much more slowly, with typical lifetimes greater than tens of nanoseconds. We compare these results with results from CuInGaSe2 films. Radiative coefficients and minority carrier lifetimes are obtained from the data.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ef1e674aa9a51612b1ab2cf2963d642b https://doi.org/10.1063/1.117264 Zobrazit plný text záznamu