| Autor: |
Albena Paskaleva, M. Tapajna, Karol Fröhlich, E. Atanassova, Kristína Hušeková, Edmund Dobročka |
| Rok vydání: |
2008 |
| Předmět: |
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| Zdroj: |
2008 International Conference on Advanced Semiconductor Devices and Microsystems. |
| DOI: |
10.1109/asdam.2008.4743334 |
| Popis: |
Electrical properties of metal-oxide-semiconductor structures composed of MOCVD grown Ru or RuO2 metal gates, rf sputtered Ta2O5 oxide layers, and nitrided Si was investigated. The dielectric constant of Ta2O5 as extracted from capacitance-voltage characteristics was found to be 24 and 28 for Ru and RuO2 gated structures, respectively. Interfacial SiO2-like layer with a thickness of ~2 nm was observed from X-ray reflectivity analysis. The effective work functions of Ru and RuO2 in contact with Ta2O5 were found to be 4.65 and 4.8 eV, respectively. Temperature dependent current-voltage measurements indicate the transition from the Pool-Frenkel emission (or thermionic field emission) to the field emission conduction mechanism in combination with the direct tunneling across the SiO2-like interfacial layer under gate as well as substrate injection. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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