Frank Partial Dislocation in 4H-SiC Epitaxial Layer by MSE Method
| Autor: | Toru Matsunami, Hisashi Yoshioka, Toshiyuki Isshiki, Nobuhiko Nakamura, Hiroshi Kawami, Shinkichi Hamada, Kimito Nishikawa, Yoshitaka Setoguchi |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Condensed matter physics Mechanical Engineering Substrate (electronics) Condensed Matter Physics Epitaxy Fault (power engineering) Crystal Crystallography Mechanics of Materials Threading (manufacturing) Partial dislocations General Materials Science Dislocation Layer (electronics) |
| Zdroj: | Materials Science Forum. 725:31-34 |
| ISSN: | 1662-9752 |
| Popis: | We have been trying to improve a quality of crystal, using the metastable solvent epitaxy (MSE) method, one of the solution methods. In MSE, a Frank-type fault is formed by conversion of a threading screw dislocation (TSD) in the substrate. To study the status of the growth, we performed plane-viewed TEM observation. Analysis of Burgers vectors in the TEM image showed Frank PDs (Partial Dislocations) which do not include a components and Frank PDs which include a components. The total Burgers vectors of Frank-type fault including a components are represented as b=a/3+c, which indicates some TSDs in the substrate also include a components. |
| Databáze: | OpenAIRE |
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