Relation between photocreated and thermally-quenched defects in a-Si:H
| Autor: | Tatsuo Shimizu, Masahiro Mitani, Minoru Kumeda, Takayuki Nishino |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Quenching
Condensed matter physics Silicon Chemistry business.industry Photoconductivity Dangling bond chemistry.chemical_element Dark conductivity Condensed Matter Physics Electronic Optical and Magnetic Materials Esr spectra Optics Electrical resistivity and conductivity Materials Chemistry Ceramics and Composites business |
| Zdroj: | Journal of Non-Crystalline Solids. :292-295 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/s0022-3093(98)00067-2 |
| Popis: | It was found that light-soaked and thermally-quenched a-Si:H films with the same density of neutral dangling bonds, D0 (3×1016 cm−3 including the surface defects) have different light-induced ESR spectra and different dark- and photoconductivities. We carried out the light-soaking for these two films and found that the D0-creation rate for the thermally-quenched film is larger than that for the light-soaked film. From these results, we conclude that the Si–Si weak bond plays a role of the photocreation of D0. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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