Chemical features and nature of excited states in silicon oxides

Autor:	V. B. Kopylov, I. V. Pushkar
Rok vydání:	2006
Předmět:	Silicon Singlet oxygen chemistry.chemical_element General Chemistry Photochemistry Electron spectroscopy Oxygen chemistry.chemical_compound chemistry Excited state Specific surface area Singlet fission Molecule Physics::Chemical Physics
Zdroj:	Russian Journal of General Chemistry. 76:1531-1532
ISSN:	1608-3350 1070-3632
DOI:	10.1134/s1070363206100033
Popis:	Analysis of thermal emission activity of silicon oxides with respect to oxygen showed that electronically excited molecules of singlet oxygen make up the main fraction in the gas samples. The negative linear correlation between the specific activity and specific surface area of the samples points to volume localization of labile structural fragments. High-resolution vibrational and electronic spectroscopy revealed isolated Si-O oscillators, dimeric and trimeric oxygen associates, as well as Si-Si bonds in the ground and electronically excited states in the structure of isolated oscillators. Calculation and published data gave evidence for the possibility of dark initiation of redox transformations accompanied by formation of excited states.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ef06b83e24bf50b2fad3fbd6d78e5cf7 https://doi.org/10.1134/s1070363206100033 Zobrazit plný text záznamu Plný text ve formátu PDF