Argon-oxygen ion-plasma treatment modifies the surface composition and photoluminescence spectrum of porous silicon

Autor:	A. E. Kostishko, A. V. Drozdov, B. M. Kostishko, Petr Shibaev
Rok vydání:	2000
Předmět:	Photoluminescence Materials science Physics and Astronomy (miscellaneous) Passivation Etching (microfabrication) technology industry and agriculture Analytical chemistry Nanocrystalline silicon Reactive-ion etching Silicon oxide Porous silicon Isotropic etching
Zdroj:	Technical Physics Letters. 26:919-922
ISSN:	1090-6533 1063-7850
DOI:	10.1134/1.1321239
Popis:	We have studied changes in the surface composition and photoluminescence spectrum of porous silicon (por-Si) during the ion-plasma etching of samples in an argon-oxygen gas mixture. This treatment leads to the passivation of the surface of quantum filaments by residual fluorine and the formation of silicon oxide. The source of fluorine atoms are HF molecules retained in the volume of pores upon the por-Si structure formation by chemical etching. Increase in the fluorine concentration is accompanied by the growth in intensity of the blue-green band and broadening of the red band in the photoluminescence spectrum of por-Si.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ef0118bc03d3e2634a5d614cd494946e https://doi.org/10.1134/1.1321239 Zobrazit plný text záznamu Plný text ve formátu PDF