Large Storage Window in a-SiN x /nc-Si/a-SiN x Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

Autor:	Huang Xin-Fan, Wang Xiang, Ding Hong-Lin, Yu Lin-Wei, Li Wei, Chen Kun-Ji, Zhang Xian-Gao, Huang Jian
Rok vydání:	2008
Předmět:	Materials science business.industry Nanocrystalline silicon General Physics and Astronomy Insulator (electricity) Electron Silane chemistry.chemical_compound chemistry Plasma-enhanced chemical vapor deposition Quantum dot Optoelectronics NC-SI business Quasistatic process
Zdroj:	Chinese Physics Letters. 25:2690-2693
ISSN:	1741-3540 0256-307X
DOI:	10.1088/0256-307x/25/7/099
Popis:	An a-SiNx/nanocrystalline silicon [(nc-Si)/a-SiNx] sandwiched structure is fabricated in a plasma enhanced chemical vapour deposition (PECVD) system at low temperature (250° C). The nc-Si layer is fabricated from a hydrogen-diluted silane mixture gas by using a layer-by-layer deposition technique. Atom force microscopy measurement shows that the density of nc-Si is about 2 × 1011 cm−2. By the pretreatment of plasma nitridation, low density of interface states and high-quality interface between the Si substrate and a-SiNx insulator layer are obtained. The density of interface state at the midgap is calculated to be 1 × 1010 cm−2eV−1 from the quasistatic and high frequency C – V data. The charging and discharging property of nc-Si quantum dots is studied by capacitance-voltage (C – V) measurement at room temperature. An ultra-large hysteresis is observed in the C – V characteristics, which is attributed to storage of the electrons and holes into the nc-Si dots. The long-term charge-loss process is studied and ascribed to low density of interface states at SiNx/Si substrate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::eeeaf4f91287f0760f75d998abef66c2 https://doi.org/10.1088/0256-307x/25/7/099 Zobrazit plný text záznamu