Clustering effects in plasma-assisted chemical fluid deposition of copper: Similarities between deposition rate and density fluctuation

Autor:	Tomoya Tamura, Tsuyohito Ito
Rok vydání:	2011
Předmět:	Supercritical carbon dioxide Silicon chemistry Analytical chemistry General Physics and Astronomy chemistry.chemical_element Plasma Substrate (electronics) Physical and Theoretical Chemistry Current (fluid) Cluster analysis Deposition (chemistry) Copper
Zdroj:	Chemical Physics Letters. 502:173-175
ISSN:	0009-2614
Popis:	Copper films are deposited on a silicon substrate using plasma-assisted chemical fluid deposition (P-CFD) in supercritical carbon dioxide (scCO 2 ). The deposition rate at the center (peak) of the deposited circle-shape film, as a function of environmental pressure at the constant temperature and current, shows a peak near the pressure of the density fluctuation maximum; indicating clustering effects in P-CFD.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::eee21c7edf8d3dbcf379e68ebd9edece https://doi.org/10.1016/j.cplett.2010.12.038 Zobrazit plný text záznamu Full Text from ScienceDirect