Zinc diffusion from a reactively sputtered glass source in GaAs

Autor:	D. Jishiashvili, L. Mosidze, R. Dzanelidze, Zeinab Shiolashvili
Rok vydání:	2002
Předmět:	Inert Materials science Inorganic chemistry Doping Analytical chemistry chemistry.chemical_element Zinc Atmospheric temperature range Gallium arsenide chemistry.chemical_compound Zinc diffusion chemistry Diffusion process Sputtering
Zdroj:	1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings.
DOI:	10.1109/smicnd.1997.651598
Popis:	A low temperature reactive ion-plasma sputtering technique is used to obtain a zinc diffusion source in the form of zinc silicate glass (ZSG). Diffusion parameters of Zn in GaAs are evaluated in the temperature range of 470-700/spl deg/C. The developed original technology simplifies the diffusion process, allows to the perform doping procedure in open tubes and inert atmospheres without encapsulation. The surface concentration can be regulated in the wide range from 10/sup 16/ to 10/sup 20/ cm/sup -3/.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::eee09e26685f48e9497dba1b9536adfb https://doi.org/10.1109/smicnd.1997.651598 Zobrazit plný text záznamu