Solid-to-solid diffusion in the gallium arsenide device technology
| Autor: | W. v. Muench, H. Statz |
|---|---|
| Rok vydání: | 1966 |
| Předmět: |
Materials science
business.industry Doping chemistry.chemical_element Photoresist Condensed Matter Physics Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound chemistry Materials Chemistry Electronic engineering Optoelectronics Deposition (phase transition) Pyrolytic carbon Electrical and Electronic Engineering Diffusion (business) Gallium business Tin |
| Zdroj: | Solid-State Electronics. 9:939-942 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(66)90069-4 |
| Popis: | The technique of tin and zinc diffusion from doped pyrolytic SiO2-layers has been used to form the base regions of planar npn- and pnp-GaAs-transistors. By a suitable sequence of deposition and photoresist processes it is possible to obtain a pattern of doped oxide layers which yields planar npn-transistors in a single diffusion step. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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