Back-Gate Bias and Substrate Doping Influenced Substrate Effect in UTBB FD-SOI MOS Transistors: Analysis and Optimization Guidelines
| Autor: | Mandar S. Bhoir, Nihar R. Mohapatra, Yogesh Singh Chauhan |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Frequency response Materials science business.industry Transconductance Doping Transistor Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY Substrate (electronics) 01 natural sciences Electronic Optical and Magnetic Materials law.invention law Logic gate 0103 physical sciences MOSFET Hardware_INTEGRATEDCIRCUITS Optoelectronics Electrical and Electronic Engineering business Hardware_LOGICDESIGN |
| Zdroj: | IEEE Transactions on Electron Devices. 66:861-867 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | In this paper, we present physical insights into the role of substrate on the anomalous frequency behavior of small-signal transconductance and output conductance in the ultrathin body and buried oxide fully depleted silicon-on-insulator MOS transistors. Using the simple dc analysis, we attribute this anomalous behavior to the negative feedback originating from both minority and majority carriers in the substrate at different frequency ranges. Through measurements and detailed TCAD simulations, we have shown that back-gate bias and substrate doping strongly modulate the frequency behavior of transconductance and output conductance. It is finally proposed that circuit/device designers can smartly use the back-gate bias and substrate doping to minimize the substrate effect and improve the frequency response of the device intrinsic gain. |
| Databáze: | OpenAIRE |
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