(Invited) Innovative Deposition Technology for Advanced Materials
Autor: | P. Lehnen, Ziaul Karim, Johannes Lindner, Brian Lu, Yoshi Senzaki, Bernd Schineller, Peter K. Baumann, U. Weber, Michael Heuken |
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Rok vydání: | 2010 |
Předmět: | |
Zdroj: | ECS Transactions. 28:137-144 |
ISSN: | 1938-6737 1938-5862 |
Popis: | Multi component films for a range of device applications were deposited by atomic vapor deposition (AVD®). Dysprosium doped HfO2 was studied as a high-k material. All HfDyOx films showed a tegragonal/cubic phase. A Dy concentration of 4% was determined for an optimum increase of the k-value. The material GeSbTe was investigated as a possible candidate for phase change applications. The material was deposited in a wide range of compositions in a controlled fashion. In particular the Ge2Sb2Te5 phase was achieved with good composition, thickness and electrical resistivity uniformity. Gap fill and phase change properties were studied. |
Databáze: | OpenAIRE |
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