(Invited) Innovative Deposition Technology for Advanced Materials

Autor: P. Lehnen, Ziaul Karim, Johannes Lindner, Brian Lu, Yoshi Senzaki, Bernd Schineller, Peter K. Baumann, U. Weber, Michael Heuken
Rok vydání: 2010
Předmět:
Zdroj: ECS Transactions. 28:137-144
ISSN: 1938-6737
1938-5862
Popis: Multi component films for a range of device applications were deposited by atomic vapor deposition (AVD®). Dysprosium doped HfO2 was studied as a high-k material. All HfDyOx films showed a tegragonal/cubic phase. A Dy concentration of 4% was determined for an optimum increase of the k-value. The material GeSbTe was investigated as a possible candidate for phase change applications. The material was deposited in a wide range of compositions in a controlled fashion. In particular the Ge2Sb2Te5 phase was achieved with good composition, thickness and electrical resistivity uniformity. Gap fill and phase change properties were studied.
Databáze: OpenAIRE