Improve hot phosphoric process robustness in 300 mm nitride strip wet bench

Autor:	J.-J. Calvier, M. Geomini, P. Garnier, G. Horellou, C. Henderson, V. Piard
Rok vydání:	2005
Předmět:	Materials science business.industry Oxide Chemical vapor deposition Nitride chemistry.chemical_compound chemistry Robustness (computer science) Shallow trench isolation Electronic engineering Optoelectronics Sensitivity (control systems) business Lithography Phosphoric acid
Zdroj:	ISSM 2005, IEEE International Symposium on Semiconductor Manufacturing, 2005..
DOI:	10.1109/issm.2005.1513399
Popis:	Selectivity between thermally grown oxide and LPCVD nitride during hot phosphoric process is a well known key point of shallow trench isolation (STI) module integration. The main challenges are to control the step height and the pad oxide remaining thickness. Actually, following the technology shrinks from 120 nm to 65 nm, these parameters become critical for the lithography steps sensitivity regarding previous patterning and for the Sac On Pad integration. The process robustness is improved by saturating the initial chemical and by refreshing the phosphoric acid during the bath lifetime. The highlights are a process stability improvement, a H/sub 3/PO/sub 4/ filter lifetime increase and an overall better tool availability.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::eed325d61e14f2f65203a06c98566f6d https://doi.org/10.1109/issm.2005.1513399 Zobrazit plný text záznamu