Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots

Autor:	I. B. Chistokhin, A. B. Talochkin
Rok vydání:	2011
Předmět:	Physics Solid-state physics Condensed matter physics Quantum dot Photoconductivity Spectrum (functional analysis) General Physics and Astronomy Energy level Electron hole Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Quantum Spectral line
Zdroj:	Journal of Experimental and Theoretical Physics. 113:510-515
ISSN:	1090-6509 1063-7761
Popis:	The lateral photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots of various sizes are investigated. We observed optical transition lines between the hole levels of quantum dots and electronic states of Si. This enabled us to construct a detailed energy level diagram of the electron-hole spectrum of the Si/Ge structures. It is shown that the hole levels of Ge quantum dots are successfully described by the “quantum box” model using the actual sizes of Ge islands. It I found that the position of the longwavelength photosensitivity boundary of Si/Ge structures with Ge quantum dots can be controlled by changing the growth parameters.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::eecee128bcc9c1e04dcfc5bb1ea41168 https://doi.org/10.1134/s1063776111070107 Zobrazit plný text záznamu Plný text ve formátu PDF