Analysis of the mixing effect in InAlAs/InGaAs metal-semiconductor-metal photodetectors
| Autor: | Barry L. Stann, Hongen Shen, Keith Aliberti, Fan Ren, S. Svensson, R. Mehandru |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
business.industry Photodetector Optical power Condensed Matter Physics Atomic and Molecular Physics and Optics Metal semiconductor Electronic Optical and Magnetic Materials Metal visual_art visual_art.visual_art_medium Optoelectronics Mixing effect Electrical and Electronic Engineering business Microwave Mixing (physics) |
| Zdroj: | Microwave and Optical Technology Letters. 39:108-112 |
| ISSN: | 1098-2760 0895-2477 |
| DOI: | 10.1002/mop.11141 |
| Popis: | The optoelectronic mixing effect in InAlAs Schottky-enhanced InGaAs-based metal-semiconductor-metal photodetectors (MSM-PDs) is analyzed. The measured frequency bandwidth of the optoelectronic mixer (OEM) is less than that of a corresponding photodetector. The mixing efficiency depends on the light-modulation, local-oscillator, and mixed-signal frequencies and decreases nonlinearly with a decrease in optical power. We present a circuit model of the OEM to explain the experimental results. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 108–112, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11141 |
| Databáze: | OpenAIRE |
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