Structure and characteristics ofC3N4thin films prepared by rf plasma-enhanced chemical vapor deposition
| Autor: | Fan Xiangjun, Zhang Zhihong, Fu Dejun, Wu Da-Wei, Guo Huaixi, Meng Xianquan |
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| Rok vydání: | 1997 |
| Předmět: | |
| Zdroj: | Physical Review B. 56:4949-4954 |
| ISSN: | 1095-3795 0163-1829 |
| Popis: | ${\mathrm{C}}_{3}{\mathrm{N}}_{4}$ films were prepared on Si(111) by rf plasma-enhanced chemical vapor deposition using ${\mathrm{Si}}_{3}{\mathrm{N}}_{4}/\mathrm{T}\mathrm{i}\mathrm{N}$ and ${\mathrm{Si}}_{3}{\mathrm{N}}_{4}/\mathrm{Z}\mathrm{r}\mathrm{N}$ as transition layers. X-ray diffraction and transmission electron diffraction revealed that the films deposited have a polycrystalline structure. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy confirmed the presence of ${\mathrm{sp}}^{3}$ and ${\mathrm{sp}}^{2}$ hybridized C atoms tetrahedrally and hexagonally bonded with N atoms, respectively. The nitrogen concentration was calculated from the XPS spectra. Graphite-free ${\mathrm{C}}_{3}{\mathrm{N}}_{4}$ films were obtained under optimal conditions. The Vickers hardness of the ${\mathrm{C}}_{3}{\mathrm{N}}_{4}$ films falls in the range of 2950--5100 ${\mathrm{k}\mathrm{g}\mathrm{f}/\mathrm{m}\mathrm{m}}^{2}.$ The ${\mathrm{C}}_{3}{\mathrm{N}}_{4}$ films exhibit high resistance against acid and electrochemical etching. Thermal gravimetric and differential thermal analysis showed that the films are thermally stable at temperatures ranging from room temperature to 1200 \ifmmode^\circ\else\textdegree\fi{}C. |
| Databáze: | OpenAIRE |
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