Breakdown Voltage Walk-in Phenomenon and Optimization for the Trench-Gate p-Type VDMOS Under Single Avalanche Stress
| Autor: | Siyang Liu, Weifeng Sun, Liu Qian, Li Lu, Jiaxing Wei, Zhu Yuanzheng, Jianhui Wu, Xin Tong, Zhuo Yang, Genyi Wang |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Microscope business.industry Trapping 01 natural sciences Breakdown point Electronic Optical and Magnetic Materials law.invention Stress (mechanics) law 0103 physical sciences Trench Optoelectronics Breakdown voltage Electrical and Electronic Engineering business Trench gate Degradation (telecommunications) |
| Zdroj: | IEEE Transactions on Electron Devices. 67:2445-2450 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | An anomalous breakdown voltage (BV) walk-in phenomenon of the trench-gate p-type vertical double-diffused metal–oxide–semiconductor (VDMOS) after single avalanche stress has been experimentally investigated. It is found that the BV of the VDMOS is decreased after the single avalanche stress, while other electrical parameters remain unchanged. T-CAD simulations and emission microscope (EMMI) analysis have been carried out. As a result, the shift of the breakdown point of the VDMOS, which results in the hot hole injection and trapping at the termination region, should be responsible for the BV degradation. A novel device structure with different trench depths in the termination region for the trench-gate p-type VDMOS is proposed to suppress the BV walk-in phenomenon. |
| Databáze: | OpenAIRE |
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