Strain relaxation in the epitaxy of La2/3Sr1/3MnO3grown by pulsed-laser deposition on SrTiO3(001)
| Autor: | J.-P. Contour, A. Barthélémy, D. Imhoff, Olivier Durand, F. Pailloux, R. Lyonnet, André Rocher, Jean-Luc Maurice |
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| Rok vydání: | 2003 |
| Předmět: | |
| Zdroj: | Philosophical Magazine. 83:3201-3224 |
| ISSN: | 1478-6443 1478-6435 |
| DOI: | 10.1080/14786430310001603436 |
| Popis: | With a Curie point at 370 K, the half-metal (La0.7Sr0.3)MnO3 (LSMO) is one of the most interesting candidates for electronic devices based on tunnel magnetoresistance. SrTiO3 (STO) is up to now the best substrate for the epitaxy of suitable thin films of LSMO. The pseudocubic unit cell of rhombohedral LSMO has a parameter a LSMO such that (a STO − a LSMO)/a LSMO = + 0.83% (where a STO is the parameter of cubic STO) and an angle of 90.26°. As strained growth is tetragonal, relaxation implies recovery of both the pseudocubic parameter and of the original angle. In the LSMO layers that we prepare by pulsed-laser deposition, we show that these two processes are quite independent. The angular distortion is partially recovered by twinning in films 25 nm thick, while recovery of the parameter never occurs in the thickness range that we explored (up to 432 nm). A relaxation, however, takes place above a thickness of 100 nm, associated with a transition from two-dimensional to three-dimensional columnar growth. It... |
| Databáze: | OpenAIRE |
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