Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices
| Autor: | G. M. Foster, Leonard J. Brillson, David C. Look, Buguo Wang, Alexander Jarjour, Hantian Gao, Martin W. Allen, A. Hyland, William Ruane, Marius Grundmann, H. von Wenckstern, Jon W. Cox |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Nanostructure Solid-state physics business.industry Surface photovoltage Wide-bandgap semiconductor Nanowire Nanotechnology Cathodoluminescence 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Characterization (materials science) Semiconductor 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | Journal of Electronic Materials. 47:4980-4986 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | Wide-bandgap semiconductors are now leading the way to new physical phenomena and device applications at nanoscale dimensions. The impact of defects on the electronic properties of these materials increases as their size decreases, motivating new techniques to characterize and begin to control these electronic states. Leading these advances have been the semiconductors ZnO, GaN, and related materials. This paper highlights the importance of native point defects in these semiconductors and describes how a complement of spatially localized surface science and spectroscopy techniques in three dimensions can characterize, image, and begin to control these electronic states at the nanoscale. A combination of characterization techniques including depth-resolved cathodoluminescence spectroscopy, surface photovoltage spectroscopy, and hyperspectral imaging can describe the nature and distribution of defects at interfaces at both bulk and nanoscale surfaces, their metal interfaces, and inside nanostructures themselves. These features as well as temperature and mechanical strain inside wide-bandgap device structures at the nanoscale can be measured even while these devices are operating. These advanced capabilities enable several new directions for describing defects at the nanoscale, showing how they contribute to device degradation, and guiding growth processes to control them. |
| Databáze: | OpenAIRE |
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