Strained AlGaInP quantum wire lasers
| Autor: | A. M. Moy, A. C. Chen, K. C. Hsieh, K. Y. Cheng, P. J. Pearah |
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| Rok vydání: | 1995 |
| Předmět: |
Materials science
Condensed matter physics business.industry Quantum wire Superlattice technology industry and agriculture Physics::Optics Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Semiconductor laser theory law.invention Inorganic Chemistry Quantum dot laser Quantum dot law Materials Chemistry Optoelectronics Quantum well laser business Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 150:293-298 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(95)80223-y |
| Popis: | We report on the fabrication of strained separate-confinement heterostructure AlGaInP visible laser diodes with multiple quantum wire active regions formed in situ during gas source molecular beam epitaxy. Lateral composition modulation with a period on the order of 100 A perpendicular to the growth direction occurs spontaneously during the growth of the (GaP)2/(InP)2 short-period superlattice active region by the strain-induced lateral-layer ordering (SILO) process. Individual laser diodes fabricated from the same wafer but emitting parallel and normal to the wire axis exhibit highly anisotropic properties, including large difference in threshold current, emission wavelength, and opposite polarizations. These effects are explained in terms of the strained quantum wire potential. The additional degree of quantum confinement in quantum wire structure reduces the threshold current density by a factor of > 2.7 when compared with an otherwise identical quantum well laser. |
| Databáze: | OpenAIRE |
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