Evaluation of precursors for chemical vapor deposition of ruthenium
| Autor: | N. Mettlach, J. M. White, Y. M. Sun, R. L. Hance, K. Smith |
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| Rok vydání: | 2000 |
| Předmět: |
inorganic chemicals
Chemistry Scanning electron microscope Inorganic chemistry Metals and Alloys chemistry.chemical_element Surfaces and Interfaces Chemical vapor deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ruthenium X-ray photoelectron spectroscopy Transmission electron microscopy Materials Chemistry Chemical vapor deposition of ruthenium Metalorganic vapour phase epitaxy Thin film |
| Zdroj: | Thin Solid Films. 376:73-81 |
| ISSN: | 0040-6090 |
| Popis: | Several commercially available organometallic precursors have been evaluated for metallorganic chemical vapor deposition (MOCVD) of pure ruthenium films. Of these, only a dimer, [RuC5H5(CO)2]2, proved suitable for CVD. On patterned Si3N4 and flat barium strontium titanate (BST), pure, conductive, conformal ruthenium films were grown from this dimer when oxygen was used as a reaction gas. Without oxygen, significant amounts of carbon were incorporated into the film. Oxygen and substrate temperature effects on ruthenium CVD film growth were investigated by resistivity measurements, in situ X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). Growth conditions and possible mechanisms are discussed. |
| Databáze: | OpenAIRE |
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