Electrical Properties of Microwave Plasma Chemical Vapor Deposited Diamond Thin Films
| Autor: | Raj N. Singh, P. B. Kosel, R. Ramamurti |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Silicon business.industry Analytical chemistry chemistry.chemical_element Diamond Plasma Chemical vapor deposition Combustion chemical vapor deposition engineering.material Microcrystalline Carbon film chemistry Electrical resistivity and conductivity engineering Optoelectronics business |
| Zdroj: | Advances in Electronic and Electrochemical Ceramics |
| DOI: | 10.1002/9781118407899.ch9 |
| Popis: | Diamond films are prepared by microwave plasma enhanced chemical vapor deposition (MPECVD) on silicon (100) substrates using Ar-H 2 -CH 4 plasmas. The current-voltage characteristics of undoped microcrystalline diamond films are measured as functions of temperature and applied voltage. Currently these films have tremendous applications in high temperature electronics. Variation of electrical properties of these films like resistivity, activation energy and carrier concentrations are studied with temperature and applied voltage. This can be related with the types of conduction taking place in different regimes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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