The Production of Thin Films of Metals, Metal Silicides, and Metal Borides by Chemical Vapour Deposition Using Single Organometallic Precursors
| Autor: | B J Aylett |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
010302 applied physics
Materials science Metallurgy Metals and Alloys 02 engineering and technology Surfaces and Interfaces Chemical vapor deposition Vapour deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Porous silicon 01 natural sciences Surfaces Coatings and Films Hard metals Metal Transition metal Mechanics of Materials visual_art 0103 physical sciences visual_art.visual_art_medium Deposition (phase transition) Thin film 0210 nano-technology |
| Zdroj: | Transactions of the IMF. 72:127-129 |
| ISSN: | 1745-9192 0020-2967 |
| DOI: | 10.1080/00202967.1994.11871037 |
| Popis: | SUMMARYChemical Vapour Deposition (CVD) offers advantages over other deposition techniques because it can produce conformal coverage of rough surfaces and within cavities. Earlier applications of CVD to produce thin coatings of metals and metal silicides and borides (”hard metals”), involving the use of two or more volatile precursors, are briefly reviewed.There is growing interest in using “prevenient” or single-substance CVD precursors; this is illustrated for transition metal silicides and borides, and the requisite properties and likely potential of such precursors are discussed. Recent experiments in which the pores of porous silicon (some 100 A in diameter) are impregnated with metals and metal silicides to a depth of at least 3 μm illustrate the power of the method. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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