Formation and characterization of Ta2O5/TaOx films formed by O ion implantation

Autor:	Robert Elliman, Simon Ruffell, J. Hautala, P. Kurunczi, Jonathan Gerald England, Y. Erokhin
Rok vydání:	2013
Předmět:	Suboxide Nuclear and High Energy Physics Materials science Analytical chemistry Oxide Heterojunction Fluence chemistry.chemical_compound Ion implantation X-ray photoelectron spectroscopy chemistry Transmission electron microscopy Electrical measurements Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 307:491-494
ISSN:	0168-583X
DOI:	10.1016/j.nimb.2012.11.092
Popis:	Ta2O5/TaOx (oxide/suboxide) heterostructures are fabricated by high fluence O ion-implantation into deposited Ta films. The resultant films are characterized by depth profiling X-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron microscopy (XTEM), four-point probe, and current–voltage and capacitance–voltage measurements. The measurements show that Ta2O5/TaOx oxide/suboxide heterostructures can be fabricated with the relative thicknesses of the layers controlled by implantation energy and fluence. Electrical measurements show that this approach has promise for high volume manufacturing of resistive switching memory devices based on oxide/suboxide heterostructures.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ee65977a6d45942a4698074adb7f6816 https://doi.org/10.1016/j.nimb.2012.11.092 Zobrazit plný text záznamu Full Text from ScienceDirect