| Autor: |
Younsoo Kim, Jae-Hyun Joo, Jong-Burn Park, Jun-sik Lee, Jong-woo Yoon, Kyung-Cheol Jeong, Jae-Sung Roh |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361). |
| DOI: |
10.1109/icvc.1999.820985 |
| Popis: |
RuO/sub x/ thin films were deposited on TiN/SiO/sub 2//Si substrates by metal organic chemical vapor deposition (MOCVD) at deposition temperatures of 250/spl deg/C-400/spl deg/ C. We have used Ru(mhd), as a metal organic (MO) source. No films were deposited without the addition of O/sub 2/ gas. RuO/sub 2/ films were deposited at high O/sub 2/ addition. For the deposition of Ru films in the surface reaction controlled region, the activation energy was 0.58 eV. The smooth and well-adherent Ru films had very low resistivities. The microstructure of Ru films was greatly dependent on deposition conditions. Ru films deposited at 27/spl deg/C showed a good step coverage. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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