Cathodoluminescence Study on Spatial Luminescence Properties of InN/GaN Multiple Quantum Wells Consisting of 1-Monolayer-Thick InN Wells/GaN Matrix
| Autor: | Yoshihiro Ishitani, Akihiko Yoshikawa, H. Saito, S. B. Che, E. S. Hwang, Xinqiang Wang |
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| Rok vydání: | 2007 |
| Předmět: |
Indium nitride
Materials science business.industry Exciton Cathodoluminescence Gallium nitride Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials chemistry.chemical_compound Optics chemistry Materials Chemistry Optoelectronics Electrical and Electronic Engineering Dislocation business Luminescence Molecular beam epitaxy |
| Zdroj: | Journal of Electronic Materials. 37:597-602 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-007-0363-6 |
| Popis: | Spatially resolved luminescence properties of InN/GaN multiple quantum wells (MQWs) consisting of nominally one monolayer (1-ML)-thick InN QWs embedded in a GaN matrix are studied by cross-sectional and plan-view cathodoluminescence measurements. First it is confirmed that the dominant emission peaks observed at around 390 nm to 430 nm in the MQWs samples are attributed to the effects of inserting ∼1-ML-thick InN wells in the GaN matrix, resulting in efficient localization of GaN excitons at InN QWs. Furthermore, it is revealed that the detailed structure of the MQWs, such as the thickness distribution and interface sharpness, is very sensitive to the presence of surface defects such as hillocks around screw-component threading dislocations, resulting in different emission wavelengths/energies. This is because the epitaxy process for depositing such thin InN wells is seriously affected by the atomic-level surface structures/properties of the growth front. It will be concluded that it is necessary to use lower dislocation density GaN bulk templates to obtain much higher structural quality InN/GaN MQWs good enough for characterizing their optical properties. |
| Databáze: | OpenAIRE |
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