Deposition of nickel oxide by direct current reactive sputtering
| Autor: | Linda Cattin, Arkadiusz Michal Karpinski, P.-Y. Jouan, A. Ferrec, Luc Brohan, M. A. Djouadi, Mireille Richard-Plouet |
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| Rok vydání: | 2012 |
| Předmět: |
010302 applied physics
Materials science Argon Nickel oxide Direct current Non-blocking I/O Metals and Alloys chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces Partial pressure 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Chemical engineering chemistry Sputtering 0103 physical sciences Cavity magnetron Materials Chemistry Thin film 0210 nano-technology |
| Zdroj: | Thin Solid Films. 520:3609-3613 |
| ISSN: | 0040-6090 |
| Popis: | Nickel oxide thin films were deposited by Direct Current magnetron reactive sputtering from Ni target onto SnO2:F conductive glass substrates. The process was carried out without intentional heating, in an argon/oxygen gas mixture with various oxygen contents and discharge currents. The polycrystalline NiO thin films were deposited with controlled growth of the structure along [111] and [200] crystallographic directions for chosen conditions. Morphology of as-deposited films was found to depend on the preferentially oriented NiO crystals. Moreover, on the basis of discharge voltage as a function of the O2 partial pressure for a constant discharge current, we present here the method to estimate the deposition conditions allowing us to achieve the desired preferential growth of transparent p-type semiconductor NiO, by Direct Current magnetron reactive sputtering. |
| Databáze: | OpenAIRE |
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