| Autor: |
Fujii Kuniharu, N. Senguttuvan, Koichi Takei, Hajime Okumura, Tomohisa Kato, Masahiko Hiratani, Masahiro Aoshima, Yuji Matsumoto, Kazuhisa Kurashige, Toru Ujihara |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
Materials Science Forum. :35-38 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/www.scientific.net/msf.821-823.35 |
| Popis: |
The influences of solution flow and lateral temperature distribution on the surface morphology of the 4H-SiC single crystal grown from solution was investigated. A flat surface region was enlarged by the seed-rotation rate. The solution flow simulation indicated that the higher rotation rate made the outward solution flow ordered beneath the solution surface. Such a solution flow was thought to be effective to enlarge the flat region of growth front. Furthermore, a full-flat surface was obtained with a hollow-type graphite rod at a seed-rotation rate of 60 min-1. The simulated results of temperature distribution showed the hollow-type graphite rod reduced the lateral temperature gradient at the SiC-solution interface. The ordered solution flow and the small temperature gradient at the growth front were found to be effective to make the growth front flat in the solution-growth method. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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