T-type IGBT module with new voltage class authentic RB-IGBT for DC-1000V solar inverter application

Autor:	Sawada Mutsumi, Danyi Xiang, Mitsuhiro Kakefu, Masahito Otsuki
Rok vydání:	2014
Předmět:	Engineering business.industry Power module Gate driver Electrical engineering Electronic engineering Inverter Insulated-gate bipolar transistor business Solar inverter Pulse-width modulation Voltage Power (physics)
Zdroj:	2014 International Power Electronics and Application Conference and Exposition.
DOI:	10.1109/peac.2014.7038068
Popis:	This paper describes newly developed T-type full-leg IGBT modules, specifically designed for mega-solar inverter application of higher DC-input voltage, such as DC 1000V input. The newly developed 900V voltage class authentic RB-IGBTs are installed in the power module, which have significant advantages in switching performance when compared to the alternative method 1200V standard IGBT and reverse blocking diode cascade. The 1200V–900A full-T-leg high power IGBT module demonstrations will be discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ee3a1f4e700318f62038ec50e6b86a6e https://doi.org/10.1109/peac.2014.7038068 Zobrazit plný text záznamu