Simulation Study of Gate-Drain Leakage Current and Density of Polarization Charge at Heterojunction Interface in GaN HEMTs
| Autor: | Yasuyuki Miyamoto, Takahiro Gotow |
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| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | IEEJ Transactions on Electronics, Information and Systems. 142:348-353 |
| ISSN: | 1348-8155 0385-4221 |
| DOI: | 10.1541/ieejeiss.142.348 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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