| Autor: |
Prashant Majhi, Le Van H, Tung I-Cheng, Brian S. Doyle, Yoo Hui Jae, Tobias L Brown-Heft, Yu-Jin Chen, Abhishek Sharma, Miriam Reshotko, Jack T. Kavalieros, Matthew V. Metz |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
2020 IEEE International Electron Devices Meeting (IEDM). |
| DOI: |
10.1109/iedm13553.2020.9371940 |
| Popis: |
Scaled ferroelectric transistors (L g =76 nm) in a back- gated configuration are fabricated with a channel-last process flow. Using this approach, optimization of the ferroelectric gate oxide film can be decoupled from that of the semiconductor channel to reduce parasitic interfaces. As a result, ferroelectric transistors with 3σ memory window for fast programming time of 10 ns (including an instantaneous read-after-write) at 1.8 V and high endurance of 1012 cycles are demonstrated for the first time. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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