Latching in N-channel, high-voltage hybrid SINFET's

Autor:	Michael S. Adler, Deva Narayan Pattanayak, T.P. Chow, Bantval Jayant Baliga
Rok vydání:	2005
Předmět:	Temperature control Materials science business.industry Doping Electrical engineering Optoelectronics Schottky diode High voltage Insulated-gate bipolar transistor Conductivity business Common emitter Voltage
Zdroj:	Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90..
DOI:	10.1109/ispsd.1990.991069
Popis:	The latching characteristics of 500V, n-channel HSINFET's are measured and compared to lateral IGBT's with and without collector shorts. In particular, the effect of substrate resistivity, Schottky region length in the collector and emitter shorts on latching suppression are studied. Also, latching or maximum gate controlled current at elevated temperatures up to 150 C is measured. While the HSINFET's are superior to the corresponding collector-shorted LIGBT's in latching, but inferior to the LIGBT's without collector shorts.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ee2d12933e48df8d605721eee782678f https://doi.org/10.1109/ispsd.1990.991069 Zobrazit plný text záznamu