Bulk silicon micromachining using porous silicon sacrificial layers

Autor: Grigoris Kaltsas, A. G. Nassiopoulos
Rok vydání: 1997
Předmět:
Zdroj: Microelectronic Engineering. 35:397-400
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(96)00209-2
Popis: A bulk silicon micromachining technique using porous silicon as a sacrificial layer is developed. The proposed process is fully C-MOS compatible and it was successfully used to fabricate deep cavities into silicon with very smooth bottom surfaces and sidewalls. Suspended flat polysilicon membranes were also produced of a surface as large as 230 × 550 μm2, as well as polysilicon cantilevers. This process opens important possibilities in silicon integrated sensor fabrication.
Databáze: OpenAIRE