Properties of Ge doped a-SixCy:H Films prepared by co-sputtering

Autor:	Nobuo Saito, Tomuo Yamaguchi, Sigeaki Nakamura, Isamu Nakaaki, Shoji Yoshioka
Rok vydání:	1998
Předmět:	Materials science Sputtering Band gap Photoconductivity Doping Analytical chemistry Partial pressure Activation energy Electrical and Electronic Engineering Conductivity Condensed Matter Physics Surfaces Coatings and Films Amorphous solid
Zdroj:	SHINKU. 41:171-174
ISSN:	1880-9413 0559-8516
DOI:	10.3131/jvsj.41.171
Popis:	Ge doped amorphous SixCy : H films have been deposited by reactive rf magnetron co-sputtering of Si-Ge composite target in argon-methane gas mixture.The effect of methane partial pressure P on the structural, optical and electrical properties of the films was investigated. With increasing P, the carbon content, the optical bandgap and the activation energy of conductivity increase. Both the B-value deduced from the Tauc's optical plot and the photoconductivity decrease rapidly at high P in the undoped a-SixCy : H. The temperature dependence of conductivity shows the activated type conduction at high P, whereas the hopping conduction is predominant at low P. It is found that the addition of Ge could improve the reduction of the photoconductivity as well as the B-value at high P.
Databáze:	OpenAIRE
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