Diffusion and Reaction Kinetics of Fast-Ion-Induced Point Defects Studied by Deep Level Transient Spectroscopy

Autor:	Anders Hallén, Bengt Gunnar Svensson, Niklas Keskitalo
Rok vydání:	1997
Předmět:	Radiation Deep-level transient spectroscopy Silicon Chemistry Analytical chemistry chemistry.chemical_element Condensed Matter Physics Crystallographic defect Ion Chemical kinetics Ion implantation General Materials Science Diffusion (business) Dose rate
Zdroj:	Defect and Diffusion Forum. :193-204
ISSN:	1662-9507
DOI:	10.4028/www.scientific.net/ddf.153-155.193
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ee18a8170333e7b35074266e8e4fd520 https://doi.org/10.4028/www.scientific.net/ddf.153-155.193 Zobrazit plný text záznamu