Mobility of interstitial B in Si analyzed by a stochastic reorientation model
| Autor: | B. Ittermann, Hans-Jürgen Stöckmann, M. Füllgrabe, D. Peters, H. Ackermann, F. Kroll |
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| Rok vydání: | 2001 |
| Předmět: |
Density matrix
Materials science Condensed matter physics Silicon Semiconductor materials chemistry.chemical_element Activation energy Condensed Matter Physics Electronic Optical and Magnetic Materials Formalism (philosophy of mathematics) Ion implantation Nuclear magnetic resonance chemistry Impurity Electrical and Electronic Engineering Boron |
| Zdroj: | Physica B: Condensed Matter. :236-239 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/s0921-4526(01)00680-9 |
| Popis: | A density-matrix-based formalism is presented to extract activation parameters for the reorientational motion of an interstitial B defect in Si, a center created by ion implantation. β-radiation detected nuclear magnetic resonance (β-NMR) data show beginning mobility at T≈240 K . At T=410 K the signal is lost even though the center is still present. The activation energy for its reorientation in p-type Si is determined to be E A =0.53(2) eV . |
| Databáze: | OpenAIRE |
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