Single-electron transistor using self-aligned sidewall spacer gates on silicon-on-insulator nanowire
| Autor: | Che-Chia Chang, Yung-Chun Wu, Shu Fen Hu, Chin-Lung Sung, Tiao-Yuan Huang |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
business.industry Transistor Nanowire Physics::Optics Silicon on insulator Coulomb blockade Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Computer Science::Other law.invention Computer Science::Hardware Architecture Condensed Matter::Materials Science law Quantum dot Electric field MOSFET Optoelectronics business Electron-beam lithography |
| Zdroj: | 2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003.. |
| DOI: | 10.1109/nano.2003.1230975 |
| Popis: | A dual-gate-controlled single-electron transistor was fabricated by using self-aligned polysilicon sidewall spacer gates on a silicon-on-insulator nanowire. The quantum dot formed by the electric field effect of the dual-gate structure was miniaturized to smaller than the state-of-the-art feature size, through a combination of electron beam lithography, oxidation and polysilicon sidewall spacer gate formation processes. The device shows typical MOSFET I-V characteristics at room temperature. However, the Coulomb gap and Coulomb oscillations are clearly observed at 4 K. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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