Surface reaction mechanisms of trifluoroacetylacetone on clean and pre-oxidized Ni(110): An example where etching chemistry does not follow volatility trends
| Autor: | H. Lee Nigg, Richard I. Masel |
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| Rok vydání: | 1998 |
| Předmět: | |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:3259-3265 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.581531 |
| Popis: | Ni contamination is an increasing problem in the fabrication of thin microelectronic films. In previous work, we examined nickel removal using oxygen and 1,1,1,5,5,5-hexafluoro2,4-pentanedione (Hhfac) or 2,4-pentanedione (Hacac) and oxygen. In both cases, Ni was etched cleanly by the precursors under net oxidizing conditions. Decomposition pathways were prevalent, however, under reducing conditions. In the results reported in this article, we used temperature-programmed desorption to examine the use of another β-diketone, 1,1,1-trifluoro-2,4-pentanedione, and oxygen in the same process. Ni was etched on the oxidized surface by the desorption of Ni(CF3COCHCOCH3)2 between 260 and 430 K. Etching ceased as decomposition products formed. The structures of decomposition products on both surfaces indicates the promotion of β-bond scission by Ni, predominantly at C-CF3, C-CH3 and C-CH/C-CH2. In the hexafluoropentanedione and pentanedione studies, β scission was also the decomposition pathway. However, with triflu... |
| Databáze: | OpenAIRE |
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