Characterization of RF sputtered zinc oxide thin films on silicon using scanning acoustic microscopy
| Autor: | Miso Kim, Yong-Il Kim, Yun-Hee Lee, Namkyoung Choi |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Diffraction
Materials science Silicon Scanning electron microscope chemistry.chemical_element 02 engineering and technology 01 natural sciences Crystallinity Optics Sputtering 0103 physical sciences Materials Chemistry Surface roughness Electrical and Electronic Engineering Thin film Composite material 010302 applied physics business.industry Acoustic wave 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Mechanics of Materials Ceramics and Composites 0210 nano-technology business |
| Zdroj: | Journal of Electroceramics. 40:79-87 |
| ISSN: | 1573-8663 1385-3449 |
| Popis: | Zinc oxide (ZnO) thin films were grown on silicon (100) substrate using radio frequency (RF) sputtering under various processing parameters including deposition time and annealing temperature. A series of characterization techniques including X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and scanning acoustic microscopy (SAM) have been used to analyze the crystallinity and crystal orientation, structural morphology, surface roughness, and acoustic properties of these films. In particular, quantitative analysis of elastic wave propagation in ZnO thin films by scanning acoustic microscopy has been performed for the first time in the present work. It has been shown that the propagation properties of acoustic waves on the surface of ZnO thin films strongly depend on film thickness, crystallinity, and surface roughness. The dispersion properties of surface acoustic waves (SAWs) are observed as a function of ZnO film thickness. The velocities of SAWs range from 5328.3 m/s to 4245.7 m/s with increasing film thickness from 32.5 nm to 2.04 μm, while smoother surface contributes to faster propagation of SAWs. |
| Databáze: | OpenAIRE |
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