Muonium in ultra-pure and Si-doped germanium

Autor:	D. Herlach, H. Orth, K. P. Arnold, N. Haas, M. Krause, M. Krauth, K. P. Döring, Eugene E. Haller, Alfred Seeger, W. Jacobs, M. Gladisch
Rok vydání:	1984
Předmět:	Nuclear and High Energy Physics Muon Silicon Muonium chemistry.chemical_element Germanium Condensed Matter Physics Atomic and Molecular Physics and Optics Magnetic field chemistry Impurity Ionization Charge carrier Physics::Atomic Physics Physical and Theoretical Chemistry Atomic physics
Zdroj:	Hyperfine Interactions. 18:629-634
ISSN:	1572-9540
DOI:	10.1007/bf02064882
Popis:	The influence of the isoelectronic impurity silicon ([Si]=1012−1018 cm−3) on the spin precession signals of positive muons in ultra-pure germanium crystals is investigated between 5 and 340 K in transverse magnetic fields of 0.5 to 27.5 mT. Normal (“isotropic”) muonium atoms Mu are formed in all samples with about the same probability (≈ 0.7). Down to quite low temperatures (20 K) Mu is found to diffuse very rapidly through the Ge matrix and to become ionized by interaction with the Si atoms. Another ionization process, presumably due to the screening of theμ+ by the increasing number of free charge carriers, sets in at about 180 K.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::edf4746a17cf22089f1aed34eae7bcca https://doi.org/10.1007/bf02064882 Zobrazit plný text záznamu Full text from SpringerLink