Boron diffusion from a reactively sputtered glass source in Si and SiO2

Autor:	D. Jishiashvili, Z. Shiolashvili, G. D. Bagratishvili, R. B. Dzhanelidze, L. V. Piskanovskii
Rok vydání:	1979
Předmět:	Materials science Borosilicate glass Sputtering Diffusion Reactive plasma Analytical chemistry Boron diffusion Atmospheric temperature range Condensed Matter Physics Electronic Optical and Magnetic Materials
Zdroj:	Physica Status Solidi (a). 56:27-35
ISSN:	1521-396X 0031-8965
DOI:	10.1002/pssa.2210560103
Popis:	The reactive plasma sputtering technique is used to obtain a boron diffusion source in the form of borosilicate glass (BSG). Physlcal and chemical properties of the BSG films are investigated. Diffusion parameters of B in Si and SiO, are obtaincd in the temperature range between 950 and 1200 °C. [Russian Text Ignored]
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::edf02a59d88f612aa9abb48319b55b17 https://doi.org/10.1002/pssa.2210560103 Zobrazit plný text záznamu Plný text