| Autor: |
W. P. Migal, A. V. Rzhanov, N. N. Migal |
| Rok vydání: |
1969 |
| Předmět: |
|
| Zdroj: |
Journal of Vacuum Science and Technology. 6:566-568 |
| ISSN: |
0022-5355 |
| DOI: |
10.1116/1.1315684 |
| Popis: |
Films of about 100 μ thickness were grown by iodide-transport process in a closed tube, with the concentration of acceptor impurities below 1012 cm−3. Measurements were made on the samples, which had one natural surface of film growth and the other surface prepared by the usual polishing and etching procedure. The Hall coefficient and surface-conductivity measurements were made by a dc field-effect method in a temperature range between 100 and 300 K. Results of the measurements are expressed in terms of surface mobility and trapped charge curves. The scattering of electrons is a diffuse process for both conditions of the surface (natural-grown surface and treated surface of the film) and over the whole temperature range. The scattering of holes is diffuse on the treated surface and only partially diffuse on the natural surface of film. The probability of diffuse reflection for holes in this case is equal to 0.3–0.4 and does not depend on temperature. The dominant mechanism of the surface scattering is dis... |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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