An All Silicon Carbide High Temperature (450+ °C) High Voltage Gain AC Coupled Differential Amplifier
| Autor: | John R. Fraley, Bryon Western, Marcelo Schupbach, Jie Yang, Alexander B. Lostetter |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Capacitive coupling
Materials science business.industry Mechanical Engineering Electrical engineering Differential amplifier High voltage Condensed Matter Physics Extreme temperature law.invention chemistry.chemical_compound chemistry Mechanics of Materials law Silicon carbide Operational amplifier Optoelectronics General Materials Science Field-effect transistor business Voltage |
| Zdroj: | Materials Science Forum. :746-749 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.679-680.746 |
| Popis: | APEI, Inc. designed, fabricated and tested a high gain AC coupled differential amplifier based on a custom-built silicon carbide (SiC) vertical junction field effect transistor (VJFET). This SiC differential amplifier is capable of extreme temperature operation up to 450 °C, at which a high differential voltage gain of more than 47 dB is maintained. This high gain AC coupled differential amplifier can be integrated with high temperature sensors that deliver weak AC output signals to improve signal quality and noise immunity. |
| Databáze: | OpenAIRE |
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