An optimized 0.3 μm N-MOS transistor
| Autor: | B. Dal'Zotto, M. Guerin, J. Gautier, F. Buiguez, G. Guegan |
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| Rok vydání: | 1985 |
| Předmět: | |
| Zdroj: | Physica B+C. 129:291-295 |
| ISSN: | 0378-4363 |
| DOI: | 10.1016/0378-4363(85)90588-1 |
| Popis: | We present new experimental results on optimized MOS transistor with 0.3 μm channel length. The channel doping profile has been optimized to achieve proper threshold voltage with no punchthrough at 3 V. Devices have been fabricated using NMOS process and direct e-beam writing. These devices have long channel behaviour and their characteristics are compared to C.A.D. models for threshold voltage and drain current. They exhibit transconductance values of 150 mS/mm at room temperature and 205 mS/mm at 77° K. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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