A 4w, 56dB Gain, Microstrip Amplifier at 15 GHz Utilizing GaAs FETs and IMPATT Diodes

Autor: V. Sokolov, F.H. Doerbeck, M. R. Namordi
Rok vydání: 2005
Předmět:
Zdroj: MTT-S International Microwave Symposium Digest.
DOI: 10.1109/mwsym.1979.1124113
Popis: Performance results and design considerations are presented for an all solid-state power amplifier suitable for spacecraft transmitter applications. Design emphasis is placed on high power, high efficiency and high reliability operation, as well as on compact amplifier construction.
Databáze: OpenAIRE