Soft breakdown in very thin Ta2O5 gate dielectric layers
| Autor: | M.M. Heyns, B Ogle, A Halliyal, Paul W. Mertens, Joong S. Jeon, Michel Houssa |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
Dielectric strength business.industry Gate dielectric Electrical engineering Time-dependent gate oxide breakdown Hardware_PERFORMANCEANDRELIABILITY Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Stress (mechanics) Capacitor Hardware_GENERAL law Gate oxide Hardware_INTEGRATEDCIRCUITS Materials Chemistry Optoelectronics Breakdown voltage Electrical and Electronic Engineering business Hardware_LOGICDESIGN High-κ dielectric |
| Zdroj: | Solid-State Electronics. 44:521-525 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(99)00263-4 |
| Popis: | The time-dependent dielectric breakdown of metal-oxide-semiconductor capacitors with 6 nm and 8 nm Ta 2 O 5 gate dielectric layers is investigated. During constant voltage stress of the capacitors, a small increase in the time-dependent gate current is observed, followed by the occurrence of erratic fluctuations. After the occurrence of such a small jump, the current–voltage characteristics reveal increased gate current in the low gate voltage region, as compared to the current–voltage characteristics of fresh (unstressed) devices. In addition the gate current is shown to behave like a power law of the applied gate voltage. All above features are characteristics of the so-called soft breakdown event which has been previously reported for ultra-thin SiO 2 layers. |
| Databáze: | OpenAIRE |
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