On the Mechanism of ITO Etching in Halogen Acids: The Influence of Oxidizing Agents
| Autor: | P. C. Baarslag, J. E. A. M. van den Meerakker, Monica Scholten |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Reaction mechanism
Renewable Energy Sustainability and the Environment Stereochemistry Inorganic chemistry Oxide chemistry.chemical_element Condensed Matter Physics Electrochemistry Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Reaction rate constant chemistry Etching (microfabrication) Oxidizing agent Materials Chemistry Dissolution Indium |
| Zdroj: | Journal of The Electrochemical Society. 142:2321-2325 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2044294 |
| Popis: | The etching process of polycrystalline tin-doped indium oxide (ITO) films in HCl solutions is investigated by kinetic and electrochemical experiments and the patterning characteristics are examined by scanning electron microscopy. The influence of oxidizing agents on the etching behavior is studied. A model is proposed in which ITO is first attacked by undissociated HCl molecules, forming a surface intermediate which is mobile on the surface. This intermediate can react with HCl molecules or with the oxidizing agent. The competition between these two reactions determines the kinetics and the patterning characteristics of the dissolution process. A kinetic rate law is derived that predicts the etch rate in FeCl 3 /HCl solutions. A good agreement between experimental and calculated values is obtained in a wide range of HCl and FeCl 3 concentrations. |
| Databáze: | OpenAIRE |
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