| Autor: |
M. Sweet, J.V. Subhas Chandra Bose, M.M. De Souza, E.M. Sankara Narayanan, O. Spulber |
| Rok vydání: |
2001 |
| Předmět: |
|
| Zdroj: |
IEE Proceedings - Circuits, Devices and Systems. 148:79 |
| ISSN: |
1350-2409 |
| DOI: |
10.1049/ip-cds:20010294 |
| Popis: |
A novel 1.2 kV, trench-planar insulated gate bipolar transistor (TPIGBT) is analysed in detail using numerical modelling techniques to evaluate the influence of the injection-enhancement (IE) effect. A major innovative aspect of the device is that the trench and the planar gate oxide dimensions can be independently optimised to achieve superior performance. Furthermore, it is shown that the low conduction losses of the TPIGBT are a direct consequence of the IE effect. Results indicate a good trade-off in terms of on-state and turn-off losses in comparison to the planar and trench gated IGBTs. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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