A high-speed and high-performance full adder cell based on 32-nm CNFET technology for low voltages
| Autor: | Yavar Safaei Mehrabani, Zahra Zareei, Ahmad Khademzadeh |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Adder
business.industry Computer science Transistor Electrical engineering Hardware_PERFORMANCEANDRELIABILITY law.invention Carbon nanotube field-effect transistor Threshold voltage Nanoelectronics Hardware and Architecture law MOSFET Hardware_INTEGRATEDCIRCUITS Optoelectronics business Low voltage Hardware_LOGICDESIGN Voltage |
| Zdroj: | International Journal of High Performance Systems Architecture. 4:196 |
| ISSN: | 1751-6536 1751-6528 |
| DOI: | 10.1504/ijhpsa.2013.058975 |
| Popis: | In this paper a novel carbon nanotube field effect transistor-based CNFET one bit full adder cell is presented for low voltage applications. Since in CNFET technology the threshold voltage Vth of each transistor can be easily changed by the alteration of the diameters of its carbon nanotubes CNTs, a multi-threshold full adder cell is designed in this paper. In order to have accurate comparisons with some classical and state-of-the-art metal-oxide-semiconducting field-effect transistor MOSFET and CNFET based designs, comprehensive simulations with respect to various load capacitances, frequencies, and temperatures have been performed. Simulation results confirm the superiority of the proposed design in terms of delay, power consumption, and power-delay product PDP, against the other ones. Moreover, since the process fluctuations of today's sub-micron technologies are the most important concern, a Monte Carlo transient analysis in the presence of the mismatches of the CNT diameters is performed. This simulation shows that the proposed cell is reliable and functions properly in the presence of the diameter fluctuations of the CNTs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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